The homoepitaxy of n-CdTe:l layers is reported as a technological step towards the fabrication of CdTe-based p-i-n diode nuclear radiation detectors. CdTe:I layers were grown at 330degC on detector-grade (111)-oriented CdTe crystals by metalorganic vapour phase epitaxy. To ensure CdTe homoepitaxy, as-received substrates were treated before growth by etching in Br 2 -methanol and in-situ H 2 heat-cleaning at 350degC. (111)-oriented layers with fairly good surface morphology were obtained on as-prepared substrates by growing under Cd-rich vapour conditions. I-doped samples turned out to be n-type with resistivity values around a few Omega . cm and electron concentration ~10 16 cm -3 , but substantial electrical compensation of I donors occurs in the material, likely due to the formation of unintentional V Cd -l Te acceptor centres. Homoepitaxial n-CdTe:I/i-CdTe samples were used to fabricate a …