The growth, processing and electrical characterization of n-type homo-epitaxial CdTe: I layers on detector-grade CdTe single crystal wafers is reported as a preliminary technological step towards the fabrication of CdTe-based p-i-n diode X-/γ-ray detectors. n-type CdTe: I with resistivities around a few Ω⋅ cm and electron concentrations in the mid 10 16 cm− 3 is demonstrated. Reactive ion etching of the n-type epilayer around the Al electrode proved necessary to improve the IV characteristic of a Al/n-CdTe: I/i-CdTe/Pt device structure.