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The interest about zirconium oxynitrides is growing with the attention for zirconium nitrides phase at high zirconium content. In recent years a great progress has been made to realize both the higher nitride phase (Zr3N4) and the higher oxynitride phase (Zr2ON2) in more ordered crystal structures. In this work the abovementioned two phases are realized by RF magnetron sputtering technique. The characterization results, illustrated in the present paper, push towards the evidence of an evolution from zirconium N-rich nitride to the oxynitride films by introducing a very small percentage (0.5%) of water vapor in a sputtering atmosphere made only of nitrogen gas. In particular, structural analysis identified zirconium N-rich nitride as c-Zr3N4 and zirconium oxynitride as c-Zr2ON2. The formation of zirconium oxynitride is due to oxygen presence, coming from the water dissociation in the plasma. Both phases request an …
Publication date: 
29 Feb 2012

A Rizzo, MA Signore, L Mirenghi, L Tapfer, E Piscopiello, E Salernitano, R Giorgi

Biblio References: 
Volume: 520 Issue: 9 Pages: 3532-3538
Thin Solid Films