Aluminum nitride (AlN) thin films were deposited by sputtering on Ti bottom electrodes and integrated on a kapton substrate for flexible and stretchable electronics. The aim of this work was to find the best combination of Ti underlayer sputtering conditions and AlN over-growth to obtain the (002) nitride orientation, fundamental requirement for the piezoelectric response of the material in piezoelectric devices. Flexible electronics represent today’s cutting-edge electronic technologies thanks to their low cost and easy fabrication scalability.