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The relationship between structural and low-temperature transport properties is explored for InxAl1 − xAs/InxGa1 − xAs metamorphic quantum wells with x > 0.7 grown on GaAs by molecular beam epitaxy. Different step-graded buffer layers are used to gradually adapt the in-plane lattice parameter from the GaAs towards the InGaAs value. We show that using buffer layers with a suitable maximum In content the residual compressive strain in the quantum well region can be strongly reduced. Samples with virtually no residual strain in the quantum well region show a low-temperature electron mobility up to 29 m2/V s while for samples with higher residual compressive strain the low-temperature mobility is reduced. Furthermore, for samples with buffers inducing a tensile strain in the quantum well region, deep grooves are observed on the surface, and in correspondence we notice a strong deterioration of the low …
Publication date: 
22 Jul 2005

F Capotondi, G Biasiol, D Ercolani, V Grillo, E Carlino, F Romanato, L Sorba

Biblio References: 
Volume: 484 Issue: 1-2 Pages: 400-407
Thin Solid Films