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Chemical vapor deposition of 2D materials has been an active area of research in recent years because it is a scalable process for obtaining thin films that can be used to fabricate devices. The growth mechanism for hexagonal boron nitride (h-BN) on metal catalyst substrates has been described to be either surface energy driven or diffusion driven. In this work, h-BN is grown in a CVD system on Ni single crystal substrates as a function of Ni crystallographic orientation to clarify the competing forces acting on the growth mechanism. We observed that the thickness of the h-BN film depends on the Ni substrate orientation, with the growth rate increasing from the (100) surface to the (111) surface, and the highest on the (110) surface. We associate the observed results with surface reactivity and diffusivity differences for different Ni orientations. Boron and nitrogen diffuse and precipitate from the Ni bulk to form thin …
American Chemical Society
Publication date: 
29 Nov 2018

Harry Chou, Sarmita Majumder, Anumpan Roy, Massimo Catalano, Pingping Zhuang, Manuel A Quevedo-López, Luigi Colombo, Sanjay K Banerjee

Biblio References: 
ACS applied materials & interfaces