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Type: 
Journal
Description: 
Palladium has been widely employed as a hole contact to WSe2 and has enabled, at times, the highest WSe2 transistor performance. However, there are orders of magnitude variation across the literature in Pd–WSe2 contact resistance and ION/IOFF ratios with no true understanding of how to consistently achieve high–performance contacts. In this work, WSe2 transistors with impressive
Publisher: 
Publication date: 
1 Jan 2018
Authors: 

Christopher M Smyth, Lee A Walsh, Pavel Bolshakov, Massimo Catalano, Rafik Addou, Luhua Wang, Jiyoung Kim, Moon J Kim, Chadwin D Young, Christopher L Hinkle, Robert M Wallace, Lee Maltings, CNR IMM

Biblio References: 
Pages: 239
Origin: 
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS