Type:
Journal
Description:
Palladium has been widely employed as a hole contact to WSe2 and has enabled, at times, the highest WSe2 transistor performance. However, there are orders of magnitude variation across the literature in Pd–WSe2 contact resistance and ION/IOFF ratios with no true understanding of how to consistently achieve high–performance contacts. In this work, WSe2 transistors with impressive
Publisher:
Publication date:
1 Jan 2018
Biblio References:
Pages: 239
Origin:
CHARACTERIZING AND ENGINEERING THE METAL CONTACT INTERFACE IN 1D AND 2D CHALCOGENIDE SYSTEMS