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A novel technique for ion implantation of electronics materials by means of a laser ion source emitting multi-energetic ion streams was investigated. A UV pulsed laser beam, at intensities of the order of 108 W/cm2, was employed to produce plasma in a vacuum from a Ge target. The apparatus utilized was very versatile and able to contain an expansion chamber in order to allow the plasma to be diluted before the application of an accelerating voltage. The mean ion energy increased with the laser pulse energy and the ion charge state, and ranged between about 100 eV and 1 keV. To increase the ion energy a post-acceleration up to 50 kV was employed, which resulted in ion energies from about 50 keV to about 150 keV, depending on the charge state. The multi-energetic ion beam, with current density of the order of 10 mA/cm2, was employed to irradiate silicon substrates and to obtain surface implantations up to …
Publication date: 
26 Apr 2007

Fabio Belloni, Vincenzo Nassisi, Lorenzo Torrisi, Jerzy Wolowski, Domenico Doria, Antonella Lorusso, Luciano Velardi

Biblio References: 
Volume: 6346 Pages: 871-878
XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers