Synchrotron X-ray reflection topography was used to evaluate the crystal quality of a ZnTe epilayer grown by MOVPE on a low dislocation density (111) ZnTe substrate. The epilayer thicknesses were 0.35 pm and ao pm, and the growth temperature was 325 deg C or 350 deg C. Another specimen whose epilayer was grown at 400 deg C with ao pm thickness had a 0.35 pm thick buffer layer grown at 325 deg C. Reflection topographs and rocking curves were recorded from four equivalent 224 reflections using an X-ray wavelength of 0.1578 nm. Topographs of specimens with the epilayer grown at 325 deg C and 350 deg C did not show images of line defects, such as misfit dislocations. However, we could observe line images in the specimen with the epilayer grown at 400 deg C and with the buffer layer grown at 325 deg C. The line images were not observed in transmitted X-ray Laue topographs using a white X …