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Si x N y/a-Si/Si x N y thin film RF-MEMS switches were fabricated by unconventional PECVD process using surface micromachining approach. The mechanical properties of tri-layer were measured by nanoindentation and wafer curvature method. Deflections of switches clamped on two opposite edges were measured by a profilometer applying increasing quasi-point pressure loads. Finite Element Analysis (FEA) was used to study the mechanical behavior of clamped-clamped switches. An analytical solution was developed and validated, numerically and experimentally, to describe the load-deflection response of perforated membranes to quasi-point loads. The proposed function was used to determine the internal stress of the investigated membranes; the relative error between the predicted and calculated stress values was in the range 2.1–8.5%.
Publication date: 
1 Jan 2018

Chiara De Pascali, Alvise Bagolini, Donatella Duraccio, Pietro Siciliano, Luca Francioso

Biblio References: 
Volume: 2 Issue: 13 Pages: 968
Multidisciplinary Digital Publishing Institute Proceedings