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The luminescence properties of GaAs/AlGaAs core–shell nanowires grown by metalorganic vapor phase epitaxy (MOVPE) on (1¯ 1¯ 1¯)B GaAs using tertiarybutylarsine, trimethylgallium and trimethylaluminium are reported. Untapered kink-free GaAs nanowires with average diameters around 50–70 nm were grown at 400 °C by the vapour–liquid–solid method; to this purpose, colloidal Au nanoparticles were used as metal catalyst. Al0.33Ga0.67As shells were grown at 650 °C around GaAs nanowires by conventional MOVPE, with thickness ranging in the 70–160 nm interval. Low-temperature photoluminescence (PL) and high spatial resolution cathodoluminescence (CL) measurements were performed, respectively, on dense ensembles of core–shell nanowires (still on their original substrates) and single nanowires; comparison between secondary electron and monochromatic CL images of single nanowires led …
Publication date: 
15 Nov 2008

P Prete, F Marzo, P Paiano, N Lovergine, G Salviati, L Lazzarini, T Sekiguchi

Biblio References: 
Volume: 310 Issue: 23 Pages: 5114-5118
Journal of Crystal Growth