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The objective of this paper is to study the morphology, structure, and composition, as well as the thermal-induced morphological, structural, and chemical changes of copper(Cu)/ titanium nitride(TiN) bilayers versus Cu single layers, deposited on silicon substrates for microelectronic applications. These characterizations aimed to assess the reliability of Cu metallization for local interconnect and to investigate the barrier capability of TiN against Cu diffusion into the silicon (Si) substrate. Moreover, this paper provides a fundamental study of the temperature-induced interactions between Cu and Si, intermediated by the presence of a thin TiN layer. Cu thin films were sputtered onto Si substrates, with and without the interposition of thin TiN layers, and were successively annealed at temperature as high as 600 °C. Different nitrogen flux percentages in the sputtering mixture (Ar + N 2 ) were used for the deposition of the …
Publication date: 
11 Jul 2014

Antonietta Taurino, Maria Assunta Signore, Massimo Catalano, Isabella Farella, Fabio Quaranta, Massimo Di Giulio, Lorenzo Vasanelli, Pietro Siciliano

Biblio References: 
Volume: 14 Issue: 3 Pages: 890-897
IEEE Transactions on Device and Materials Reliability