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Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the …
Publication date: 
21 May 2015

Fabio Quaranta, Anna Persano, Giovanni Capoccia, Antonietta Taurino, Adriano Cola, Pietro Siciliano, Andrea Lucibello, Romolo Marcelli, Emanuela Proietti, Alvise Bagolini, Benno Margesin, Pierluigi Bellutti, Jacopo Iannacci

Biblio References: 
Volume: 9517 Pages: 183-190
Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems